Volume 94, Number 6, June 2011
|Number of page(s)||6|
|Section||Interdisciplinary Physics and Related Areas of Science and Technology|
|Published online||07 June 2011|
Faceted anomalous scaling in the epitaxial growth of semiconductor films
Departamento de Física, Universidade Federal de Viçosa - 36571-000, Viçosa, Minas Gerais, Brazil
Accepted: 3 May 2011
We apply the generic dynamical scaling theory (GDST) to surfaces of CdTe polycrystalline films grown in glass substrates at distinct temperatures. The analysed data were obtained with a stylus profiler having an estimated lateral resolution of 0.3 μm. We have found that the GDST applied to the surface power spectra foresees faceted morphology in the investigated temperature range. The temperature increase results in surfaces with larger faceted grains and, consequently, the higher the growth temperature the better the quantitative scaling analysis. High-resolution AFM images corroborate the morphological predictions of GDST.
PACS: 81.15.Aa – Theory and models of film growth / 68.35.Ct – Interface structure and roughness / 64.60.Ht – Dynamic critical phenomena
© EPLA, 2011
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