Volume 95, Number 1, July 2011
|Number of page(s)||6|
|Section||Interdisciplinary Physics and Related Areas of Science and Technology|
|Published online||06 June 2011|
Coulomb drag and high-resistivity behavior in double-layer graphene
Department of Physics and Center of Physics, University of Minho - P-4710-057, Braga, Portugal, EU
2 Academy of Sciences of Lisbon - R. Academia das Ciências 19, P-1249-122 Lisboa, Portugal, EU
3 CFP and Departamento de Física, Faculdade de Ciências Universidade do Porto - P-4169-007 Porto, Portugal, EU
4 Graphene Research Centre and Physics Department, National University of Singapore - 2 Science Drive 3, Singapore 117541
5 Department of Physics, Boston University - 590 Commonwealth Avenue, Boston, MA 02215, USA
Accepted: 23 May 2011
We show that Coulomb drag in ultra-clean graphene double layers can be used for controlling the on-and-off ratio for current flow by tuning the external gate voltage. Hence, although graphene remains semi-metallic, the double-layer graphene system can be tuned from conductive to a highly resistive state. We show that our results explain previous data of Coulomb drag in double-layer graphene samples in disordered SiO2 substrates.
PACS: 81.05.ue – Graphene / 72.80.Vp – Electronic transport in graphene
© EPLA, 2011
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