Volume 95, Number 2, July 2011
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||24 June 2011|
Correlation between Raman scattering and conductance in a molecular junction
Department of Chemistry and Biochemistry, University of California at San Diego - La Jolla, CA 92093, USA
Accepted: 23 May 2011
Using a generic model of a current-carrying molecular junction we discuss, for the first time, correlations between Raman flux and electrical conductance. A mechanism alternative to molecular motion is proposed for these experimentally detected correlations. Numerical simulations based on realistic estimates of molecular junction parameters suggest that the effect should be observable.
PACS: 73.63.-b – Electronic transport in nanoscale materials and structures / 85.35.-p – Nanoelectronic devices / 85.65.+h – Molecular electronic devices
© EPLA, 2011
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.