Volume 95, Number 3, August 2011
|Number of page(s)||6|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||15 July 2011|
Quantitative analysis of the weak anti-localization effect in ultrathin bismuth films
Departamento de Física de la Materia Condensada, Universidad de Zaragoza - 50009, Zaragoza, Spain, EU
2 Instituto de Ciencia de Materiales de Aragón, CSIC-Universidad de Zaragoza - 50009, Zaragoza, Spain, EU
3 Laboratorio de Microscopías Avanzadas (LMA), Instituto de Nanociencia de Aragón (INA), Universidad de Zaragoza - 50018, Zaragoza, Spain, EU
4 Centro Universitario de la Defensa, Academia General Militar-Universidad de Zaragoza - 50090, Zaragoza, Spain, EU
5 Department of Applied Physics, Nanjing University of Aeronautics and Astronautics - Nanjing 210016, China
Accepted: 15 June 2011
Magnetic-field dependence of conductivity in ultrathin Bi films is measured in applied magnetic fields up to 9 T, in both directions, perpendicular and parallel to the film plane, at temperatures down to 0.4 K, and analyzed in terms of the weak anti-localization theory in two-dimensional systems. With the reduction of film thickness, the classical magnetoresistance effect is completely suppressed, and only the weak anti-localization effect is observed. The parameters extracted from the analysis allow the study of the contribution of the different scattering mechanisms to the electronic transport properties in ultrathin Bi films. In particular, the thickness-independent spin-orbit scattering length indicates that the spin-orbit split surface states dominate the transport in the ultrathin-film limit.
PACS: 73.50.-h – Electronic transport phenomena in thin films / 73.20.Fz – Weak or Anderson localization / 73.25.+i – Surface conductivity and carrier phenomena
© EPLA, 2011
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