| Issue |
EPL
Volume 95, Number 4, August 2011
|
|
|---|---|---|
| Article Number | 47004 | |
| Number of page(s) | 5 | |
| Section | Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties | |
| DOI | https://doi.org/10.1209/0295-5075/95/47004 | |
| Published online | 26 July 2011 | |
Manipulation and decoherence of acceptor states in silicon
Department of Physics & Astronomy, Michigan State University - East Lansing, MI 48824-2230, USA
Received:
14
December
2010
Accepted:
24
June
2011
Dielectric constant and absorption measurements on boron-doped silicon samples show that transitions between the acceptor energy levels can be induced by an applied resonant AC electric field and the Stark tuning of level spacing with an external DC electric field. The relatively longer decoherence times, T2=2.6 μs and T1=7.4 μs, were observed by the electric echo measurement in a low boron dopant concentration Si sample (8×10−12 cm−3). The scalable acceptor-based system is a promising candidate of the charge qubit for quantum computing.
PACS: 78.47.-p – Spectroscopy of solid state dynamics / 77.22.Gm – Dielectric loss and relaxation / 42.50.Pq – Cavity quantum electrodynamics; micromasers
© EPLA, 2011
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