Volume 96, Number 3, November 2011
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||23 September 2011|
Aging-induced domain memory in acceptor-doped perovskite ferroelectrics associated with ferroelectric-ferroelectric transition cycle
Multi-disciplinary Materials Research Center, Frontier Institute of Science and Technology, State Key Lab of Electrical Insulation and Power Equipment, Xi'an Jiaotong University Xi'an, 710049, China
2 State Key Lab for Mechanical Behaviors of Materials and MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, Xi'an Jiaotong University - Xi'an, 710049, China
3 Ferroic Physics Group, National Institute for Materials Science - Tsukuba, 305-0047, Ibaraki, Japan
Accepted: 9 September 2011
Perovskite ferroelectrics naturally exhibit multiple energetically equivalent domain states; thus, a certain domain state or a certain domain pattern is not expected to reappear once it is disturbed by a phase transition; i.e., there should exist no “domain memory”. This letter, however, provides direct evidence with in situ optical microscopy for a domain memory effect in an aged K+-doped BaTiO3 single crystal during a ferroelectric-ferroelectric transition cycle between tetragonal and orthorhombic phase. By contrast, the domain memory effect is absent in an unaged sample. These results suggest that the domain memory effect is associated with point defect migration during aging. Our findings can be explained by a symmetry-conforming tendency of point defects.
PACS: 77.84.-s – Dielectric, piezoelectric, ferroelectric, and antiferroelectric materials / 77.80.Dj – Domain structure; hysteresis / 77.80.B- – Phase transitions and Curie point
© EPLA, 2011
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