Volume 96, Number 6, December 2011
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||06 December 2011|
Universal anomalous exponent of photoconduction
Department of Mathematics and Statistics, The Open University - Walton Hall, Milton Keynes, MK7 6AA, UK, EU
Accepted: 4 November 2011
Experiments often show that the photoconductance σ of a semiconductor system and the light intensity I are related by σ∼Iγ. Conventional theories give a satisfactory explanation for γ=1 or , but anamalous exponents close to are often observed. This paper argues that there is a universal anomalous regime for which (or in two dimensions), resulting from the kinetics of electron-hole recombination being controlled by Coulombic attraction. Because the local electric fields are extremely high, the theory uses the “hot-carrier” model for transport.
PACS: 72.20.Ht – High-field and nonlinear effects / 72.20.Jv – Charge carriers: generation, recombination, lifetime, and trapping / 72.40.+w – Photoconduction and photovoltaic effects
© EPLA, 2011
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