Formation of As_xSb_1−x mixing interfaces in InAs/GaSb superlattices grown by metalorganic chemical vapor deposition

¹ Key Laboratory of Semiconductor Materials Science, Institute of semiconductors, Chinese Academy of Sciences Beijing 100083, China
² Department of Physics, Tsinghua University - Beijing 100084, China

^a lgli@semi.ac.cn
^b liusm@semi.ac.cn

Received: 26 October 2011
Accepted: 13 December 2011

Abstract

Metalorganic chemical vapor deposition growth of InAs/GaSb superlattices is reported using an As_xSb_{1− x} plane that connects the InAs and GaSb layers to compensate the tensile strain introduced by the InAs layers. The effects of gas switching sequences for growing the As_xSb_{1− x} planes on the interface structure and crystalline quality of InAs/GaSb superlattices were investigated by Raman scattering spectroscopy and X-ray diffraction. It is found that uniform interfaces and high-quality superlattice can be obtained by growing the As_xSb_{1− x} planes through the exchange interaction of As and Sb atoms at the surfaces of InAs or GaSb layers.