Volume 97, Number 3, February 2012
|Number of page(s)||4|
|Section||Condensed Matter: Structural, Mechanical and Thermal Properties|
|Published online||31 January 2012|
Formation of AsxSb1−x mixing interfaces in InAs/GaSb superlattices grown by metalorganic chemical vapor deposition
Key Laboratory of Semiconductor Materials Science, Institute of semiconductors, Chinese Academy of Sciences Beijing 100083, China
2 Department of Physics, Tsinghua University - Beijing 100084, China
Accepted: 13 December 2011
Metalorganic chemical vapor deposition growth of InAs/GaSb superlattices is reported using an AsxSb1− x plane that connects the InAs and GaSb layers to compensate the tensile strain introduced by the InAs layers. The effects of gas switching sequences for growing the AsxSb1− x planes on the interface structure and crystalline quality of InAs/GaSb superlattices were investigated by Raman scattering spectroscopy and X-ray diffraction. It is found that uniform interfaces and high-quality superlattice can be obtained by growing the AsxSb1− x planes through the exchange interaction of As and Sb atoms at the surfaces of InAs or GaSb layers.
PACS: 68.65.Cd – Superlattices / 63.22.-m – Phonons or vibrational states in low-dimensional structures and nanoscale materials / 81.15.Gh – Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.)
© EPLA, 2012
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