| Issue |
EPL
Volume 97, Number 6, March 2012
|
|
|---|---|---|
| Article Number | 68011 | |
| Number of page(s) | 6 | |
| Section | Interdisciplinary Physics and Related Areas of Science and Technology | |
| DOI | https://doi.org/10.1209/0295-5075/97/68011 | |
| Published online | 22 March 2012 | |
Growth mode dependence of misfit dislocation configuration at lattice mismatched III-V semiconductor interfaces
1
CIMAP, CNRS UMR6252 - 6, Boulevard du Maréchal Juin, 14050 Caen Cedex, France, EU
2
IEMN, CNRS UMR8520 - BP 60069, 59652 Villeneuve d'Ascq Cedex, France, EU
a
yi.wang@ensicaen.fr
b
pierre.ruterana@ensicaen.fr
Received:
21
November
2011
Accepted:
27
February
2012
In GaSb/GaAs hetero-epitaxy, it is shown that a two-dimensional growth of GaSb promotes the generation of Lomer dislocations and confines the lattice mismatched strain at the hetero-interface. In contrast, 60° dislocations and closely spaced 60° pairs are predominantly generated in the three-dimensional growth mode. Consequently, a 60° dislocation glide model in combination with surface effects is able to account for the formation of Lomer, 60°, and 60° dislocation pair at high or low mismatch at hetero-interface between zinc-blende materials.
PACS: 81.05.Ea – III-V semiconductors / 61.72.Lk – Linear defects: dislocations, disclinations / 68.37.Og – High-resolution transmission electron microscopy (HRTEM)
© EPLA, 2012
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