Volume 97, Number 6, March 2012
|Number of page(s)||6|
|Section||Interdisciplinary Physics and Related Areas of Science and Technology|
|Published online||22 March 2012|
Growth mode dependence of misfit dislocation configuration at lattice mismatched III-V semiconductor interfaces
CIMAP, CNRS UMR6252 - 6, Boulevard du Maréchal Juin, 14050 Caen Cedex, France, EU
2 IEMN, CNRS UMR8520 - BP 60069, 59652 Villeneuve d'Ascq Cedex, France, EU
Accepted: 27 February 2012
In GaSb/GaAs hetero-epitaxy, it is shown that a two-dimensional growth of GaSb promotes the generation of Lomer dislocations and confines the lattice mismatched strain at the hetero-interface. In contrast, 60° dislocations and closely spaced 60° pairs are predominantly generated in the three-dimensional growth mode. Consequently, a 60° dislocation glide model in combination with surface effects is able to account for the formation of Lomer, 60°, and 60° dislocation pair at high or low mismatch at hetero-interface between zinc-blende materials.
PACS: 81.05.Ea – III-V semiconductors / 61.72.Lk – Linear defects: dislocations, disclinations / 68.37.Og – High-resolution transmission electron microscopy (HRTEM)
© EPLA, 2012
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