Volume 98, Number 1, April 2012
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||10 April 2012|
Theory of temperature coefficient of resistivity: Application to amorphous Si and Ge
Department of Physics and Astronomy, Ohio University - Athens, OH 45701, USA
Accepted: 1 March 2012
By invoking the microscopic response method in conjunction with a reasonable set of approximations, we obtain new explicit expressions for the electrical conductivity and temperature coefficient of resistivity (TCR) in amorphous semiconductors, especially a-Si:H and a-Ge:H. The predicted TCR for n-doped a-Si:H and a-Ge:H is in agreement with experiments. The conductivity from the transitions from a localized state to an extended state (LE) is comparable to that from the transitions between two localized states (LL). This resolves a long-standing anomaly, a “kink" in the experimental log10σ-vs.-T−1 curve.
PACS: 71.23.An – Theories and models; localized states / 72.20.Dp – General theory, scattering mechanisms / 71.38.Ht – Self-trapped or small polarons
© EPLA, 2012
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.