| Issue |
EPL
Volume 98, Number 1, April 2012
|
|
|---|---|---|
| Article Number | 17005 | |
| Number of page(s) | 5 | |
| Section | Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties | |
| DOI | https://doi.org/10.1209/0295-5075/98/17005 | |
| Published online | 10 April 2012 | |
Theory of temperature coefficient of resistivity: Application to amorphous Si and Ge
Department of Physics and Astronomy, Ohio University - Athens, OH 45701, USA
Received:
26
January
2012
Accepted:
1
March
2012
By invoking the microscopic response method in conjunction with a reasonable set of approximations, we obtain new explicit expressions for the electrical conductivity and temperature coefficient of resistivity (TCR) in amorphous semiconductors, especially a-Si:H and a-Ge:H. The predicted TCR for n-doped a-Si:H and a-Ge:H is in agreement with experiments. The conductivity from the transitions from a localized state to an extended state (LE) is comparable to that from the transitions between two localized states (LL). This resolves a long-standing anomaly, a “kink" in the experimental log10σ-vs.-T−1 curve.
PACS: 71.23.An – Theories and models; localized states / 72.20.Dp – General theory, scattering mechanisms / 71.38.Ht – Self-trapped or small polarons
© EPLA, 2012
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