Volume 98, Number 2, April 2012
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||23 April 2012|
Non-conventional Anderson localization in bilayered structures
Instituto de Física, Universidad Autónoma de Puebla - Apartado Postal J-48, Puebla, Pue., 72570, México
2 NSCL and Department of Physics and Astronomy, Michigan State University - East Lansing, MI 48824-1321, USA
3 Instituto de Ciencias, Universidad Autónoma de Puebla - Priv. 17 Norte No 3417, Col. San Miguel Hueyotlipan, Puebla, Pue., 72050, México
Accepted: 15 March 2012
We resolve the problem of non-conventional Anderson localization emerging in bilayered periodic-on-average structures with alternating layers of materials with positive and negative refraction indices. Recently, it was numerically discovered that in such structures with weak fluctuations of refractive indices, the localization length Lloc can be enormously large for small wave frequencies ω. Within a new approach allowing us to go beyond the second order of perturbation theory, we derive the expression for Lloc valid for any ω and small variance of disorder, σ2≪1. In the limit ω→0 one gets a quite specific dependence, L−1loc∝σ4ω8. Our approach allows one to establish the conditions under which this effect occurs.
PACS: 71.23.An – Theories and models; localized states / 73.20.Fz – Weak or Anderson localization / 73.23.-b – Electronic transport in mesoscopic systems
© EPLA, 2012
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