Volume 99, Number 4, August 2012
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||09 August 2012|
Electric storage in de-alloyed Si-Al alloy ribbons
1 Institute for Materials Research, Tohoku University - 980-8577 Sendai, Japan
2 Sendai National College of Technology - Natori 981-1239, Japan
Received: 3 July 2012
Accepted: 19 July 2012
The capacitance of de-alloyed Si1−xAlx (x = 0.2, 0.3, and 0.4) alloy ribbons with resistivities of 1–1000 Ωcm was measured as a function of frequency between 1 mHz and 1 MHz from electric charge/discharge pulse curves of 10 V applied at 100 ms–25 ns intervals, respectively, using an exponential transient analysis for electric charging/discharging. The capacitance of the de-alloyed Si-20 at.% Al specimen obtained by prompt charging/discharging decreased logarithmically from 102 μF (0.55 F/cm3) to 1.2 pF (53 nF/cm3) as frequency increased from 1 mHz to 1 MHz. From the observed electrode distance dependence on capacitance and nonlinear electronic transport behaviour, we deduced that the alloy consisted in a distributed constant equivalent circuit (series with 1.7% parallel), analogous to electric double-layer capacitors.
PACS: 77.22.-d – Dielectric properties of solids and liquids / 52.90.+z – Other topics in physics of plasmas and electric discharges (restricted to new topics in section 52) / 73.40.Vz – Semiconductor-metal-semiconductor structures
© EPLA, 2012
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