Volume 99, Number 4, August 2012
|Number of page(s)||4|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||29 August 2012|
An atomic model calculation of exchange anisotropy and uncompensated spin element in antiferromagnetic layer: An effect of exchange coupling with various ferromagnetic materials
1 Department of Applied Physics, Graduate School of Engineering, Tohoku University - 6-6-05 Aobayama, Aoba-ku, Sendai 980-8579, Japan
2 Department of Electronic Engineering, Graduate School of Engineering, Tohoku University - 6-6-05 Aobayama, Aoba-ku, Sendai 980-8579, Japan
Received: 17 April 2012
Accepted: 26 July 2012
An atomic model of the direct exchange coupling in an antiferromagnetic (AF) and ferromagnetic (FM) bilayer has been investigated. Exchange anisotropy is achieved by different mechanisms in the body-centred-cubic and face-centred-cubic FM layers. For the former, the formation of an AF domain wall directly causes the exchange anisotropy. For the latter, a cooperative effect in the AF domain wall and the asymmetric form of the uncompensated AF spins produces the exchange anisotropy.
PACS: 75.78.Cd – Micromagnetic simulations / 71.70.Gm – Exchange interactions / 75.50.Ee – Antiferromagnetics
© EPLA, 2012
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