Volume 99, Number 5, September 2012
|Number of page(s)||6|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||14 September 2012|
Potential enhancement in magnetoelectric effect at Mn-rich Co2MnSi/BaTiO3 (001) interface
1 Shaanxi Key Laboratory of Condensed Matter Structures and Properties, Northwestern Polytechnical University Xi'an 710072, Shaanxi, PRC
2 State Key Laboratory of Solidification Processing, School of Materials Science and Engineering, Northwestern Polytechnical University - Xi'an 710072, Shaanxi, PRC
Received: 21 May 2012
Accepted: 9 August 2012
Magnetoelectric (ME) effect at Co2MnSi/BaTiO3 (001) interfaces is demonstrated by using the first-principle calculations. Within paraelectric state, the calculated phase diagram reveals that the modified MnMn/TiO2 (MM/TO) interface could be stabilized under Mn-rich and Co-rich condition. Compared with previous Fe/BaTiO3 (Duan C. G. et al., Phys. Rev. Lett., 97 (2006) 047201) and Fe3O4/BaTiO3 (Niranjan M. K. et al., Phys. Rev. B, 78 (2008) 104405) interfaces, more net change in interface magnetization can be achieved at MM/TO interface when electric polarization reverses. The results suggest a sizable interface ME effect may be attained at Mn-rich Co2MnSi/BaTiO3 (001) interface, hence potential application in the area of electrically controlled magnetism.
PACS: 75.70.−i – / 75.85.+t – / 71.15.Mb –
© EPLA, 2012
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