Volume 100, Number 1, October 2012
|Number of page(s)||6|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||15 October 2012|
Unexpected improved conductivity and systematic low-temperature anomalies of a new germanium zinc indium oxide system
Department of Material Science and Engineering, National University Singapore - 21 Lower Kent Ridge Road, 117543 Singapore, Singapore
Received: 15 June 2012
Accepted: 5 September 2012
The structure, electrical conduction behaviour, optical transmittance and Haacke figure of merit (FOM) of the Ge-Zn-In-O compound are investigated for the first time. Certain Ge-Zn-In-O compounds with Ge/(Ge + Zn + In) atomic ratio even greater than 10%, denoted as a-GeZnInO, can have a surprisingly 2 times higher conductivity than indium zinc oxide (IZO) with industrial standard indium/zinc atomic ratio of 83/17 (IZO83/17). With varying Ge concentration, unexpected appearance and disappearance of the crystalline In2O3 phase and systematic low-temperature resistivity anomalies (semiconductor-metal transition) were observed and interpreted.
PACS: 72.80.-r – Conductivity of specific materials / 72.15.Rn – Localization effects (Anderson or weak localization) / 73.61.Jc – Amorphous semiconductors; glasses
© EPLA, 2012
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