Volume 100, Number 5, December 2012
|Number of page(s)||6|
|Section||Interdisciplinary Physics and Related Areas of Science and Technology|
|Published online||14 December 2012|
Infrared spectroscopy of hole-doped ABA-stacked trilayer graphene
1 Département de Physique de la Matière Condensée, Université de Genève - CH-1211 Genève 4, Switzerland
2 Graphene Industries Ltd, Manchester Centre for Mesoscience and Nanotechnology, University of Manchester Manchester, M13 9PL, UK, EU
Received: 26 August 2012
Accepted: 19 November 2012
Using infrared spectroscopy, we investigate bottom gated ABA-stacked trilayer graphene subject to an additional environment-induced p-type doping. We find that the Slonczewski-Weiss-McClure tight-binding model and the Kubo formula reproduce the gate voltage-modulated reflectivity spectra very accurately. This allows us to determine the charge densities and the potentials of the π-band electrons on all graphene layers separately and to extract the interlayer permittivity due to higher-energy bands.
PACS: 81.05.ue – Graphene / 78.20.-e – Optical properties of bulk materials and thin films
© EPLA, 2012
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