| Issue |
EPL
Volume 100, Number 5, December 2012
|
|
|---|---|---|
| Article Number | 58003 | |
| Number of page(s) | 6 | |
| Section | Interdisciplinary Physics and Related Areas of Science and Technology | |
| DOI | https://doi.org/10.1209/0295-5075/100/58003 | |
| Published online | 14 December 2012 | |
Infrared spectroscopy of hole-doped ABA-stacked trilayer graphene
1 Département de Physique de la Matière Condensée, Université de Genève - CH-1211 Genève 4, Switzerland
2 Graphene Industries Ltd, Manchester Centre for Mesoscience and Nanotechnology, University of Manchester Manchester, M13 9PL, UK, EU
Received: 26 August 2012
Accepted: 19 November 2012
Using infrared spectroscopy, we investigate bottom gated ABA-stacked trilayer graphene subject to an additional environment-induced p-type doping. We find that the Slonczewski-Weiss-McClure tight-binding model and the Kubo formula reproduce the gate voltage-modulated reflectivity spectra very accurately. This allows us to determine the charge densities and the potentials of the π-band electrons on all graphene layers separately and to extract the interlayer permittivity due to higher-energy bands.
PACS: 81.05.ue – Graphene / 78.20.-e – Optical properties of bulk materials and thin films
© EPLA, 2012
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.