Volume 101, Number 4, February 2013
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||07 March 2013|
Microscopic theory of resistance anomalous temperature behavior in graphene
Ioffe Physical-Technical Institute, Russian Academy of Sciences - St. Petersburg 194021, Russia
Received: 17 September 2012
Accepted: 7 February 2013
It is well known that the quantum correction to the conductivity in graphene may show a transition from weak-localization to weak-antilocalization regime. We develop a non-diffusion theory of the weak localization in graphene and consider the interplay between weak antilocalization due to intravalley scattering and weak localization due to intervalley scattering of electrons. The switch between the two regimes may be observed as the “metal-insulator” transition in the temperature dependence of the conductivity for the metallic regime corresponding to fast interalley transitions and the insulator regime corresponding to slow intravalley transitions.
PACS: 72.80.Vp – Electronic transport in graphene / 72.15.Rn – Localization effects (Anderson or weak localization) / 81.05.ue – Graphene
© EPLA, 2013
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