Volume 103, Number 4, August 2013
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||10 September 2013|
Electron-electron scattering in three-dimensional highly degenerate semiconductors
1 Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Department of Physics, Tianjin University - Tianjin 300072, China
2 NCTU - RIKEN Joint Research Laboratory and Institute of Physics, National Chiao Tung University Hsinchu 30010, Taiwan
3 Department of Electrophysics, National Chiao Tung University - Hsinchu 30010, Taiwan
Received: 11 July 2013
Accepted: 12 August 2013
We have measured the low-field magnetoresistances of a series of Sn-doped indium oxide thick films in the temperature T range of . The electron dephasing rate as a function of T for each film was extracted by comparing the magnetoresistance data with the three-dimensional weak-localization theoretical predictions. We found that the extracted varies linearly with . Furthermore, at a given T, varies linearly with , where kF is the Fermi wave number, and l is the electron elastic mean free path. These features are well explained in terms of the small-energy-transfer electron-electron scattering time in three-dimensional disordered conductors. This electron dephasing mechanism dominates over the electron-phonon scattering process because the carrier concentrations in our films are ∼ 3 orders of magnitude lower than those in typical metals, which resulted in a greatly suppressed electron-phonon relaxation rate. Our result is the first quantitative demonstration of this unique three-dimensional electron-electron scattering time in experiments.
PACS: 73.20.Fz – Weak or Anderson localization / 73.23.-b – Electronic transport in mesoscopic systems / 72.15.Qm – Scattering mechanisms and Kondo effect
© EPLA, 2013
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