Volume 103, Number 6, September 2013
|Number of page(s)||6|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||22 October 2013|
Magnetoresistance behavior of bi-component antidot nanostructures
1 Information Storage Materials Laboratory, Department of Electrical and Computer Engineering, National University of Singapore - Singapore-117576, Singapore
2 Institute of Microelectronics, A*STAR (Agency for Science, Technology and Research) - Singapore 117685, Singapore
3 School of Physics, University of Western Australia - Crawley, Western Australia 6009, Australia
Received: 31 July 2013
Accepted: 13 September 2013
We present a systematic study on the magnetoresistance (MR) behavior of bi-component antidot nanostructures consisting of the Ni80Fe20 antidot with holes filled with Fe dots. We observed that the stray field of the Fe dots significantly modifies the MR responses of the host Ni80Fe20 antidot lattice, despite the fact that Fe dots are not in a direct exchange and electric contact with the antidot lattice. The effects of temperature, applied-field orientation and antidot diameter on the MR responses are also investigated. Our experimental results are in good agreement with micromagnetic simulations.
PACS: 75.47.-m – Magnetotransport phenomena; materials for magnetotransport / 75.60.Jk – Magnetization reversal mechanisms / 75.75.-c – Magnetic properties of nanostructures
© EPLA, 2013
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