Volume 103, Number 6, September 2013
|Number of page(s)||6|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||22 October 2013|
Grain boundary ferromagnetism in vanadium-doped In2O3 thin films
1 Department of Physics and Astronomy, The University of Sheffield - S3 7RH, UK, EU
2 School of Chemistry and Materials Science, Shanxi Normal University - Linfen 041004, PRC
3 Advanced Photon Source, Argonne National Laboratory - Argonne, IL, 60439, USA
Received: 13 June 2013
Accepted: 17 September 2013
Room temperature ferromagnetism was observed in In2O3 thin films doped with 5 at.% V, prepared by pulsed-laser deposition at substrate temperatures ranging from 300 to . X-ray absorption fine-structure measurement indicated that V was substitutionally dissolved in the In2O3 host lattice, thus excluding the existence of secondary phases of V compounds. Magnetic measurements based on SQUID magnetometry and magnetic circular dichroism confirm that the magnetism is at grain boundaries and also in the grains. The overall magnetization originates from the competing effects between grains and grain boundaries.
PACS: 75.70.Ak – Magnetic properties of monolayers and thin films / 75.47.Lx – Magnetic oxides / 78.20.Ls – Magneto-optical effects
© EPLA, 2013
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