Volume 103, Number 6, September 2013
|Number of page(s)||6|
|Section||Interdisciplinary Physics and Related Areas of Science and Technology|
|Published online||22 October 2013|
Performance dependency on doping level of carbon nanotube for ballistic CNTFETs
1 Electronic Research Center, Iran University of Science and Technology - Narmak, 13114-16846, Tehran, Iran
2 E. E. Department of Iran University of Science and Technology - Narmak, 13114-16846, Tehran, Iran
Received: 25 May 2013
Accepted: 25 September 2013
Carbon nanotube (CNT) could be exploited as a channel or source/drain region in field effect transistors (FETs). We theoretically investigate the impact of CNT doping level on a coaxially gated CNTFET's performance in the ballistic regime. The results show that the transconductance and subthreshold swing are independent of the CNT doping value. But threshold voltage and output conductance strongly depend on the channel doping level. It seems that the most important impact of CNT doping is the change in off-state current values resulting in a shift in the transfer characteristics of the device. However, it is possible to choose an optimal value of CNT doping to obtain the highest performance.
PACS: 85.35.Kt – Nanotube devices / 85.30.Tv – Field effect devices / 85.40.Ry – Impurity doping, diffusion and ion implantation technology
© EPLA, 2013
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.