Volume 104, Number 1, October 2013
|Number of page(s)||4|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||15 November 2013|
Differential conductance of Pd-ZrO2 thin granular films prepared by RF magnetron sputtering
1 Departament de Física Fonamental, Universitat de Barcelona - Avinguda Diagonal 647, 08028 Barcelona, Spain
2 Departamento de Física de la Materia Condensada, Universidad de Cádiz - 11510 Puerto Real (Cádiz) Spain
Received: 23 July 2013
Accepted: 2 October 2013
The tunneling differential conductance of Pd-ZrO2 thin granular films prepared by RF sputtering has been measured. We found that the temperature dependence of at zero bias reveals the presence of thermally assisted tunneling. The dependence of differential conductance on applied voltage shows a parabolic background which reveals the presence of elastic tunneling in the high-temperature range (265–286 K). Below a dip, superimposed to the parabolic background, develops and the increase of at low voltage is caused by Coulomb blockade. This behavior can be described by the scaling law , which was already found in other granular materials.
PACS: 73.61.-r – Electrical properties of specific thin films / 73.63.-b – Electronic transport in nanoscale materials and structures
© EPLA, 2013
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