Volume 104, Number 1, October 2013
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||23 October 2013|
Magnetic-polaron–induced colossal magnetocapacitance in CdCr2S4
1 Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences Hefei 230031, PRC
2 Institute of Ion Beam Physics and Materials Research, Helmholtz-Zentrum Dresden-Rossendorf P. O. Box 510119, Dresden 01314, Germany
3 High Magnetic Field Laboratory, Chinese Academy of Sciences - Hefei 230031, PRC
Received: 25 September 2013
Accepted: 14 October 2013
The origin of colossal magnetoresistance and colossal magnetocapacitance in a CdCr2S4 system was investigated. Thermoelectric-power and electronic spin resonance spectra reveal that the magnetic polaron is responsible for the colossal magnetoresistance in the n-type sample. The existence of magnetic polarons in the paramagnetic insulting matrix forms an intrinsic Maxwell-Wagner system, leading to the appearance of colossal magnetocapacitance. Being consistent with the evolution of magnetic polarons upon cooling, the Maxwell-Wagner system is valid around insulator-metal transition, where the resistance derived from impedance spectroscopy matches perfectly with DC resistance.
PACS: 75.47.Gk – Colossal magnetoresistance / 77.22.-d – Dielectric properties of solids and liquids
© EPLA, 2013
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