Intraband absorption in GaAs-(Ga,Al)As variably spaced semiconductor superlattices under crossed electric and magnetic fields

¹ Instituto de Física, Facultad de Ciencias Exactas y Naturales, Universidad de Antioquia UdeA Calle 70 No. 52-21, Medellín, Colombia
² Instituto de Física, Universidade Estadual de Campinas-Unicamp - Campinas, SP, 13083-859, Brazil

Received: 8 October 2013
Accepted: 19 November 2013

Abstract

A theoretical study of the intraband absorption properties of GaAs-Ga_1−xAl_xAs variably spaced semiconductor superlattices under crossed magnetic and electric fields is presented. Calculations are performed for the applied electric field along the growth-axis direction, whereas the magnetic field is considered parallel to the heterostructure layers. By defining a critical electric field so that the heterostructure energy levels are aligned in the absence of the applied magnetic fields, one finds that, in the weak magnetic-field regime, an abrupt red shift of the absorption coefficient maxima is obtained at fields equal to or larger than the critical electric field, a fact which may be explained from the localization properties of the electron wave functions. Results in the strong magnetic-field regime reveal a rich structure on the intraband absorption coefficient which may be explained from the strong dispersion exhibited by both the energy levels and transition strengths as functions of the generalized orbit-center position. Moreover, the possibility of occurrence of absorption in a wide frequency range is also demonstrated. Present calculated results may be of interest for future design and improvement of multilayered-based photovoltaic and solar-cell devices.