Optimisation of scanning probe phase-change memory in terms of the thermal conductivities of capping and under layer

¹ School of Information Engineering, Nanchang Hangkong University - 330063, Nanchang, PRC
² College of Engineering, Mathematics and Physical Science, University of Exeter - EX4 4QF, Exeter, UK

^(a) LeiWang@nchu.edu.cn

Received: 5 September 2013
Accepted: 5 December 2013

Abstract

The optimisation of scanning probe phase-change memory using Ge₂Sb₂Te₅ materials was investigated in terms of the thermal conductivities of the capping and under layer. It was revealed that the thermal conductivities of capping and under layer need to be determined carefully in order to mitigate the writing efficacy of the scanning probe phase-change memory. An optimal media stack stemming from the incorporation of such thermal conductivity optimisation with previous findings is designed, and the ability to write small bit with regular shape under low-energy condition using this storage stack was also demonstrated.