Volume 104, Number 6, December 2013
|Number of page(s)||4|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||09 January 2014|
Effects of applied electric fields on the optical properties of CdZnO quantum well structures
1 Quantum-functional Semiconductor Research Center, Dongguk University - Seoul 100-715, Korea
2 Department of Electronics Engineering, Catholic University of Daegu - Kyeongbuk 712-702, Korea
3 Department of Physics, Chungnam National University - Daejon 305-764, South Korea
Received: 5 October 2013
Accepted: 9 December 2013
CdZnO/MgZnO QW structures with higher Cd quantity are found to have smaller optical gain because of the strain-induced piezoelectric polarization and the spontaneous polarization. These strain-induced polarizations can be reduced effectively by applied electric fields in CdZnO/ZnMgO QW structures with high Cd quantity. For optical properties of CdZnO/MgZnO QW structures, the optical gain is increased because the internal field is compensated with the reverse field, confirmed by Stark shifts. These results demonstrate that a high-performance optical-devices operation can be realized in CdZnO/MgZnO QW structures by eliminating the droop phenomenon.
PACS: 73.21.Fg – Quantum wells / 78.67.De – Quantum wells
© EPLA, 2013
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