| Issue |
EPL
Volume 104, Number 6, December 2013
|
|
|---|---|---|
| Article Number | 67003 | |
| Number of page(s) | 4 | |
| Section | Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties | |
| DOI | https://doi.org/10.1209/0295-5075/104/67003 | |
| Published online | 09 January 2014 | |
Effects of applied electric fields on the optical properties of CdZnO quantum well structures
1 Quantum-functional Semiconductor Research Center, Dongguk University - Seoul 100-715, Korea
2 Department of Electronics Engineering, Catholic University of Daegu - Kyeongbuk 712-702, Korea
3 Department of Physics, Chungnam National University - Daejon 305-764, South Korea
Received: 5 October 2013
Accepted: 9 December 2013
CdZnO/MgZnO QW structures with higher Cd quantity are found to have smaller optical gain because of the strain-induced piezoelectric polarization and the spontaneous polarization. These strain-induced polarizations can be reduced effectively by applied electric fields in CdZnO/ZnMgO QW structures with high Cd quantity. For optical properties of CdZnO/MgZnO QW structures, the optical gain is increased because the internal field is compensated with the reverse field, confirmed by Stark shifts. These results demonstrate that a high-performance optical-devices operation can be realized in CdZnO/MgZnO QW structures by eliminating the droop phenomenon.
PACS: 73.21.Fg – Quantum wells / 78.67.De – Quantum wells
© EPLA, 2013
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.