Volume 105, Number 1, January 2014
|Number of page(s)||6|
|Section||Condensed Matter: Structural, Mechanical and Thermal Properties|
|Published online||05 February 2014|
Optical phonons as a probe to determine both composition and strain in InxAl(1−x) As quantum dots embedded in an AlAs matrix
1 A. V. Rzhanov Institute of Semiconductor Physics, Siberian Division of the Russian Academy of Sciences Lavrenteva 13, Novosibirsk 630090, Russia
2 Novosibirsk State University - Pirogova street, 2, 630090, Novosibirsk, Russia
3 Omsk Scientific Center of Siberian Branch Russian Academy of Sciences - Neftezavodskaya Street, 54, Omsk, 644040 Russia
4 Université de Lorraine, Institut Jean Lamour UMR CNRS 7198 - B.P. 70239, 54506 Vandœuvre- lès-Nancy Cedex, France
Received: 12 October 2013
Accepted: 5 January 2014
InxAl(1−x)As quantum dots (QDs) embedded in an AlAs matrix were studied using Raman scattering and photoluminescence spectroscopy techniques. The longitudinal optical (LO) and transverse optical (TO) In-As bond vibrations frequencies are found to depend on both composition and strain. Using different scattering geometries (allowed for LO or for TO modes) we were able to obtain the experimental values of these frequencies. By comparing these values with the calculated frequencies, one can determine both the mean composition (stoichiometry parameter x) and the biaxial strain in InxAl(1−x)As QDs embedded in an AlAs matrix. Our approach is simple, non-destructive and fast.
PACS: 63.20.Ry – Anharmonic lattice modes / 63.20.Pw – Localized modes / 78.40.Fy – Semiconductors
© EPLA, 2014
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