This article has an erratum: [erratum]
Volume 105, Number 2, January 2014
|Number of page(s)||5|
|Section||Interdisciplinary Physics and Related Areas of Science and Technology|
|Published online||11 February 2014|
Effect of the electric field on the mechanical properties of gallium nitride nanowires
College of Engineering, Swansea University - Singleton Park, Swansea, Wales SA2 8PP, UK
Received: 2 October 2013
Accepted: 7 January 2014
The effect of an electric field on the mechanical properties of gallium nitride (GaN) nanowires is studied using molecular-dynamics simulations. Results show that the electric-field effect is detectable for the fracture strengths and strong for the fracture strains. Owning to the elastoelectric effect, the monotonic changes with the electric field are observed for Young's modulus. Such elastoelectric effect also makes the piezoelectric coefficient decrease as the axial strain increases. The elastoelectric coefficient is measured for GaN nanowires.
PACS: 81.40.Jj – Elasticity and anelasticity, stress-strain relations / 77.65.-j – Piezoelectricity and electromechanical effects / 81.05.Dz – II-VI semiconductors
© EPLA, 2014
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