Volume 105, Number 2, January 2014
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||07 February 2014|
Low thermal conductivity of amorphous Si/Si0.75Ge0.25 multilayer films with Au-interlayers
1 Department of Physics, Shanghai University - Shanghai 200444, China
2 Institute of NanoMicroEnergy, Shanghai University - Shanghai 200444, China
3 School of Materials Science and Engineering, Shanghai University - Shanghai 200072, China
4 Research Institute of Micro/Nano Science Technology, Shanghai Jiao Tong University - Shanghai 200240, China
Received: 25 October 2013
Accepted: 8 January 2014
The cross-plane thermal conductivity of amorphous Si/Si0.75Ge0.25 multilayer films with Au-interlayers prepared by magnetron sputtering was successfully measured using a differential technique at room temperature. Though gold has great thermal conductivity, the samples possess a thermal conductivity of 0.53 W/mK, which is about 50% of the amorphous Si/Si0.75Ge0.25 multilayer films. The interfacial thermal resistance is the sum of the phonon-phonon interfacial thermal resistance and the electron-phonon thermal resistance. The thermal conductivity of the samples are significantly determined by the electron-phonon coupling in a metal-nonmetal system and can be lower by choosing a convenient thickness of nonmetal and metal layers.
PACS: 74.25.fc – Electric and thermal conductivity / 68.65.Ac – Multilayers / 71.38.-k – Polarons and electron-phonon interactions
© EPLA, 2014
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