Volume 105, Number 3, February 2014
|Number of page(s)||6|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||10 February 2014|
Characterization of the quantized Hall insulator phase in the quantum critical regime
1 Department of Physics, Yeshiva University - New York, NY 10016, USA
2 Department of Physics and Hebei Advanced Thin Film Laboratory, Hebei Normal University - Hebei 050024, China
Received: 2 January 2014
Accepted: 24 January 2014
The conductivity σ and resistivity ρ tensors of the disordered Hofstadter model are mapped as functions of Fermi energy EF and temperature T in the quantum critical regime of the plateau-insulator transition (PIT). The finite-size errors are eliminated by using the non-commutative Kubo formula. The results reproduce all the key experimental characteristics of this transition in integer quantum Hall effect (IQHE) systems. In particular, the quantized Hall insulator (QHI) phase is detected and analyzed. The presently accepted characterization of the QHI phase in the quantum critical regime, based entirely on experimental data, is fully supported by our theoretical investigation.
PACS: 72.25.-b – Spin polarized transport / 72.10.Fk – Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect) / 73.20.Jc – Delocalization processes
© EPLA, 2014
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