Enhancement in anomalous Hall resistivity of Co/Pd multilayer and CoPd alloy by Ga⁺ ion irradiation

¹ Core Labs, King Abdullah University of Science and Technology (KAUST) - Thuwal 23955-6900, Saudi Arabia
² Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparing Technology, Institute of Advanced Materials Physics, Faculty of Science, Tianjin University - Tianjin 300072, China
³ Materials Science and Engineering, King Abdullah University of Science and Technology (KAUST) Thuwal 23955-6900, Saudi Arabia

^(a) xixiang.zhang@kaust.edu.sa

Received: 20 October 2013
Accepted: 12 February 2014

Abstract

In this paper, we report the effect of Ga⁺ ion irradiation on anomalous Hall effect (AHE) and longitudinal resistivity in [Co(3 Å)/Pd(5 Å)]₈₀ multilayer and Co₄₂Pd₅₈ alloy. 4- and 2-fold increases in anomalous Hall resistivity in the Co/Pd multilayer and CoPd alloy have been observed after irradiations at doses of and , respectively. Skew scattering and side jump contributions to AHE have been analyzed based on the scaling relationship . For the Co/Pd multilayer, AHE is mainly affected by ion irradiation-induced interface diffusion and defects. For the CoPd alloy, the increase in doses above induces a sign change in skew scattering, followed by the skew scattering contribution to AHE overwhelming the side jump contribution, this phenomenon should be attributed to irradiation-induced defects and modifications in chemical ordering.