Volume 105, Number 5, March 2014
|Number of page(s)||6|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||25 March 2014|
Measure of Diracness in two-dimensional semiconductors
Laboratoire de Physique des Solides, Univ. Paris-Sud, CNRS UMR 8502 - F-91405 Orsay, France
Received: 19 December 2013
Accepted: 5 March 2014
We analyze the low-energy properties of two-dimensional direct-gap semiconductors, such as, for example, the transition-metal dichalcogenides MoS2, WS2, and their diselenide analogues MoSe2, WSe2, etc., which are currently intensively investigated. In general, their electrons have a mixed character —they can be massive Dirac fermions as well as simple Schrödinger particles. We propose a measure (Diracness) for the degree of mixing between the two characters and discuss how this quantity can in principle be extracted experimentally, within magneto-transport measurements, and numerically via ab initio calculations.
PACS: 73.43.Qt – Magnetoresistance / 75.47.-m – Magnetotransport phenomena; materials for magnetotransport
© EPLA, 2014
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