| Issue |
EPL
Volume 106, Number 6, June 2014
|
|
|---|---|---|
| Article Number | 67006 | |
| Number of page(s) | 5 | |
| Section | Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties | |
| DOI | https://doi.org/10.1209/0295-5075/106/67006 | |
| Published online | 19 June 2014 | |
Observation of thermally activated glassiness and memory dip in a-NbSi insulating thin films
1 Institut Néel, CNRS and Université Joseph Fourier - BP 166, 38042 Grenoble, France
2 CSNSM, Université Paris-Sud - Orsay, F-91405, France
Received: 18 April 2014
Accepted: 4 June 2014
We present electrical conductance measurements on amorphous NbSi insulating thin films. These films display out-of equilibrium electronic features that are markedly different from what has been reported so far in disordered insulators. Like in the most studied systems (indium oxide and granular Al films), a slow relaxation of the conductance is observed after a quench to liquid-helium temperature which gives rise to the growth of a memory dip in MOSFET devices. But unlike in these systems, this memory dip and the related conductance relaxations are still visible up to room temperature, with clear signatures of a temperature-dependent dynamics.
PACS: 72.20.Ee – Mobility edges; hopping transport / 72.80.Ng – Disordered solids / 73.40.Qv – Metal-insulator-semiconductor structures (including semiconductor-to-insulator)
© EPLA, 2014
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