Volume 107, Number 5, September 2014
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||08 September 2014|
Magnetic ordering in Cr-doped Bi2Se3 thin films
1 Department of Physics, Clarendon Laboratory, University of Oxford - Oxford, OX1 3PU, UK
2 Department of Electrical Engineering, Stanford University - Stanford, CA 94305, USA
3 ISIS, STFC, Rutherford Appleton Lab - Didcot, OX11 0QX, UK
4 IBM Almaden Research Center - 650 Harry Road, San Jose, CA 95120, USA
5 Magnetic Spectroscopy Group, Diamond Light Source - Didcot, OX11 0DE, UK
Received: 23 July 2014
Accepted: 22 August 2014
We report the structural and magnetic study of Cr-doped Bi2Se3 thin films using x-ray diffraction (XRD), magnetometry and polarized neutron reflectometry (PNR). Epitaxial layers were grown on c-plane sapphire by molecular beam epitaxy in a two-step process. High-resolution XRD shows the exceptionally high crystalline quality of the doped films with no parasitic phases up to a Cr concentration of 12% (in % of the Bi sites occupied by substitutional Cr). The magnetic moment, measured by SQUID magnetometry, was found to be per Cr ion. The magnetic hysteresis curve shows an open loop with a coercive field of . The ferromagnetic transition temperature was determined to be analyzing the magnetization-temperature gradient. PNR shows the film to be homogeneously ferromagnetic with no enhanced magnetism near the surface or interface.
PACS: 75.50.Pp – Magnetic semiconductors / 75.30.Hx – Magnetic impurity interactions / 73.61.Ng – Insulators
© EPLA, 2014
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