Volume 107, Number 6, September 2014
|Number of page(s)||6|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||18 September 2014|
Switching properties of SrRuO3/Pb(Zr0.4Ti0.6)O3/SrRuO3 capacitor grown on Cu-coated Si substrate measured at various temperatures
1 Hebei Provincial Key Lab of Optoelectronic Information Materials, and College of Physics Science & Technology, Hebei University - Hebei 071002, China
2 Department of Physics Center for Optoelectronic Materials and Key Laboratory of ATMMT Ministry of Education, Zhejiang Sci-Tech University - Hangzhou 310018, China
3 Department of Physics, Blinn College - Bryan, TX 77805, USA
Received: 9 June 2014
Accepted: 27 August 2014
SrRuO3(SRO)/Ni-Al/Cu/Ni-Al/SiO2/Si heterostructures annealed at various temperatures are found to remain intact after annealing. Moreover, a SRO/Pb(Zr0.4Ti0.6)O3 (PZT)/SRO capacitor is grown on a Ni-Al/Cu/Ni-Al/SiO2/Si heterostructure, which is tested up to to investigate the reliability of the memory capacitor. It is found that besides the good fatigue resistance and retention characteristic, the capacitor, measured at 5 V and room temperature, possesses a large remnant polarization of and a small coercive voltage of 0.83 V, respectively. Its dominant leakage current behavior satisfies the space-charge–limited conduction at various temperatures. Very clear interfaces can be observed from the cross-sectional images of transmission electron microscopy, indicating that the Ni-Al film can be used as a diffusion barrier layer for copper metallization as well as a conducting barrier layer between copper and oxide layer.
PACS: 79.60.Jv – Interfaces; heterostructures; nanostructures / 77.55.fg – Pb(Zr,Ti)O3-based films
© EPLA, 2014
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