Volume 107, Number 6, September 2014
|Number of page(s)||6|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||24 September 2014|
Sr0.9K0.1Zn1.8Mn0.2As2: A ferromagnetic semiconductor with colossal magnetoresistance
1 Department of Physics and State Key Laboratory of Silicon Materials, Zhejiang University Hangzhoux 310027, China
2 Department of Physics, Hangzhou Normal University - Hangzhou 310036, China
Received: 16 June 2014
Accepted: 3 September 2014
A bulk diluted magnetic semiconductor (Sr,K)(Zn,Mn)2As2 was synthesized with decoupled charge and spin doping. It has a hexagonal CaAl2Si2-type structure with the (Zn,Mn)2As2 layer forming a honeycomb-like network. Magnetization measurements show that the sample undergoes a ferromagnetic transition with a Curie temperature of 12 K and magnetic moment reaches about under and . Surprisingly, a colossal negative magnetoresistance, defined as , up to under a low field of and to under , was observed at . The colossal magnetoresistance can be explained based on the Anderson localization theory.
PACS: 75.50.Pp – Magnetic semiconductors / 75.30.Kz – Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.) / 85.75.-d – Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields
© EPLA, 2014
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