Issue |
EPL
Volume 108, Number 1, October 2014
|
|
---|---|---|
Article Number | 18001 | |
Number of page(s) | 6 | |
Section | Interdisciplinary Physics and Related Areas of Science and Technology | |
DOI | https://doi.org/10.1209/0295-5075/108/18001 | |
Published online | 26 September 2014 |
A 3-dimensional interdigitated electrode geometry for the enhancement of charge collection efficiency in diamond detectors
1 Physics Department and “NIS” Inter-departmental centre, University of Torino; Istituto Nazionale di Fisica Nucleare (INFN), Sezione di Torino - via P. Giuria 1, 10125 Torino, Italia
2 “Tor Vergata” University, Industrial Engeneering Department - via del Politecnico 1, 00133 Roma Italia
3 “O.M.Corbino” Institute of Acoustics and Sensors, CNR - via del Fosso del Cavaliere 100, 00133 Roma, Italia
(a) claudio.verona@uniroma2.it
Received: 15 July 2014
Accepted: 11 September 2014
In this work, a single crystal CVD diamond film with a novel three-dimensional (3D) interdigitated electrode geometry has been fabricated with the reactive ion etching (RIE) technique in order to increase the charge collection efficiency (CCE) with respect to that obtained by standard superficial electrodes. The geometrical arrangement of the electric field lines due to the 3D patterning of the electrodes results in a shorter travel path for the excess charge carriers, thus contributing to a more efficient charge collection mechanism. The CCE of the device was mapped by means of the ion beam induced charge (IBIC) technique. A 1 MeV proton micro-beam was raster-scanned over the active area of the diamond detector under different bias voltage conditions, enabling to probe the charge transport properties of the detector up to a depth of below the sample surface. The experimental results, supported by the numerical simulations, show a significant improvement in the 3D detector performance (i.e. CCE, energy resolution, extension of the active area) if compared with the results obtained by standard surface metallic electrodes.
PACS: 85.30.De – Semiconductor-device characterization, design, and modeling / 81.05.ug – Diamond / 29.40.Wk – Solid-state detectors
© EPLA, 2014
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