| Issue |
EPL
Volume 108, Number 2, October 2014
|
|
|---|---|---|
| Article Number | 27004 | |
| Number of page(s) | 6 | |
| Section | Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties | |
| DOI | https://doi.org/10.1209/0295-5075/108/27004 | |
| Published online | 17 October 2014 | |
Angle dependence of the photonic enhancement of the magneto-optical Kerr effect in DMS layers
1 Institute of Experimental Physics, Faculty of Physics, University of Warsaw ul. Hoża 69, PL-00-681 Warsaw, Poland
2 National Institute of Telecommunications - ul. Szachowa 1, PL-04-894 Warsaw, Poland
(a) Jan.Suffczynski@fuw.edu.pl
Received: 15 September 2014
Accepted: 6 October 2014
We investigate theoretically an angle dependence of the enhancement of the polar magneto-optical Kerr effect (MOKE) obtained thanks to a deposition of a paramagnetic Diluted Magnetic Semiconductor (DMS) layer on a one-dimensional photonic crystal layer. Our transfer-matrix-method–based calculations conducted for TE and TM polarizations of the incident light predict up to an order of magnitude stronger MOKE for a (Ga,Fe)N DMS layer when implementing the proposed design. The maximum enhancement for TE and TM polarization occurs for the light incidence at the normal and at the Brewster angle, respectively. This indicates a possibility of tuning of the MOKE enhancement by adjustment of the polarization and of the incidence angle of the light.
PACS: 78.20.Ls – Magneto-optical effects / 42.70.Qs – Photonic bandgap materials / 75.50.Pp – Magnetic semiconductors
© EPLA, 2014
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