Volume 108, Number 6, December 2014
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||12 January 2015|
Weak superconductivity in the surface layer of a bulk single-crystal boron-doped diamond
1 Technological Institute for Superhard and Novel Carbon Materials - 7a Centralnaya St., Troitsk, 142190 Moscow, Russia
2 Moscow Institute of Physics and Technology - 9 Institutskiy per., 141700 Dolgoprudny, Moscow Region, Russia
3 M.V. Lomonosov Moscow State University, Low Temperature Physics Department - 119991 Moscow, Russia
4 Moscow Engineering Physics Institute (MEPhI)-National Nuclear Research University - 115409 Moscow, Russia
5 National University of Science and Technology MISiS - 4 Leninsky Ave., 119049 Moscow, Russia
Received: 7 October 2014
Accepted: 8 December 2014
We have grown and investigated bulk single-crystal heavily boron-doped diamonds possessing superconductivity with . Only the surface layer with the thickness less than showed the degenerate semiconductor behavior with transition to the superconducting state, while the bulk of the crystal was a typical doped semiconductor. The morphology of the surface layer is dendritic polycrystalline with an average boron content of 2.5–2.9 at.%. The typical Josephson junction current-voltage characteristic was observed. The degenerate semiconductor-superconductor transition as in single-crystal high-temperature superconductors and the structural data analysis of the surface layer indicate the two-dimensional character of superconductivity, and the actual superconducting structure is a set of few-nanometer thick boron carbide layers embedded in a diamond structure.
PACS: 74.25.-q – Properties of superconductors / 74.70.Wz – Carbon-based superconductors / 74.62.Bf – Effects of material synthesis, crystal structure, and chemical composition
© EPLA, 2014
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