Volume 110, Number 4, May 2015
|Number of page(s)||6|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||16 June 2015|
Ion-irradiation–induced relaxation of tensile strain and change in directionality of magnetic domains in BaFeO3−δ thin films
1 Discipline of Physics, Indian Institute of Technology - Indore 452 017, India
2 Discipline of Physics, Indian Institute of Science Education and Research - Bhopal (IISER-Bhopal), India
3 Inter University Accelerator Centre - Aruna Asaf Ali Marg, New Delhi-110 067, India
4 Materials Science and Engineering, Indian Institute of Technology - Indore 452 017, India
Received: 16 December 2014
Accepted: 22 May 2015
Perovskite (BFO) thin films , deposited on MgO (001) single-crystal wafers, were irradiated by ion beams of: i) 200 MeV (Series-1) and ii) 100 MeV (Series-2). These films are investigated for structural, morphological, and magnetic properties. There is a systematic variation in the morphology of the BFO films with increasing beam fluence, resulting in relaxation of tensile strain. The Magnetic Force Microscopy (MFM) images show stripe-like magnetic domains of the remanent magnetization, which were studied by Fast Fourier Transformation. With increasing ion fluence, the formation of stripe domains gradually changes the direction from one crystallographic plane to two planes. MFM patterns of Series-2 show gradually diffusing directionality of magnetic domains with increasing ion fluence. The simultaneous and systematic changes in strain and magnetic properties due to ion irradiation indicate the correlated properties of BFO thin films.
PACS: 75.70.-i – Magnetic properties of thin films, surfaces, and interfaces / 75.70.Kw – Domain structure (including magnetic bubbles and vortices) / 75.47.Lx – Magnetic oxides
© EPLA, 2015
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