Volume 110, Number 6, June 2015
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||13 July 2015|
Tuning of optical bandgap and magnetization of C-implanted ZnO thin films
1 Department of Physics, Indian Institute of Technology Delhi - New Delhi 110016, India
2 Materials Science Division, Inter University Accelerator Centre - New Delhi 110067, India
Received: 4 March 2015
Accepted: 14 June 2015
The present study demonstrates that one can tune the bandgap and ferromagnetism in ZnO thin films by carbon implantation. The X-ray diffraction (XRD) study infers that at lower concentration, C ions prefer to occupy substitutional sites whereas at higher concentration it occupies partially interstitial sites. Combined with ferromagnetic behaviour, the results demonstrate that lower bandgap induces stronger magnetization and reverse in the case of wider bandgap. The optical and magnetic results are well supported by XRD and XPS measurements. These experimental results provide new evidence that ferromagnetic behaviour in these systems is closely related with the distribution of carbon ions in the host lattice.
PACS: 74.62.Dh – Effects of crystal defects, doping and substitution / 74.25.Jb – Electronic structure (photoemission, etc.)
© EPLA, 2015
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