Volume 111, Number 3, August 2015
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||31 August 2015|
Towards fully compensated ferrimagnetic spin gapless semiconductors for spintronic applications
1 Department of Physics, University of Science and Technology Beijing - Beijing 100083, PRC
2 School of Material Science and Engineering, Hebei University of Technology - Tianjin 300130, PRC
3 State Key Laboratory for Magnetism, Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences - Beijing 100190, PRC
Received: 9 February 2015
Accepted: 30 July 2015
Extensive first-principles calculations suggest that inverse Heusler compounds , , , and are the candidates to achieve fully compensated ferrimagnetic spin gapless semiconductors. It is shown that only the holes can be 100% spin polarized in , while both the excited electrons and the holes around the Fermi level 100% spin polarized in the others. A simple rule for searching potential fully compensated ferrimagnetic spin gapless semiconductors in Heusler compounds is proposed. Due to the spin gapless semiconducting and the fully compensated ferrimagnetic properties, these compounds offer distinct advantage towards the development of the practical spintronic devices.
PACS: 71.20.-b – Electron density of states and band structure of crystalline solids / 71.20.Lp – Intermetallic compounds / 75.50.Cc – Other ferromagnetic metals and alloys
© EPLA, 2015
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