Issue |
EPL
Volume 112, Number 3, November 2015
|
|
---|---|---|
Article Number | 37008 | |
Number of page(s) | 6 | |
Section | Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties | |
DOI | https://doi.org/10.1209/0295-5075/112/37008 | |
Published online | 30 November 2015 |
Control of absorption of monolayer MoS2 thin-film transistor in one-dimensional defective photonic crystal
1 Nanoscale Science and Technology Laboratory, Institute for Advanced Study, Nanchang University Nanchang 330031, China
2 BOE Technology Group Co., LTD - Dize Road, BDA, Beijing 100176, China
3 Key Lab of Non destructive Test (Ministry of Education), Nanchang Hang Kong University Nanchang 330063, China
4 Department of Physics, Nanchang University - Nanchang 330031, China
(a) jtliu@semi.ac.cn
(b) nhliu@ncu.edu.cn
Received: 20 August 2015
Accepted: 2 November 2015
The light absorption and transmission of monolayer MoS2 in a flexible one-dimensional defective photonic crystal (d-1DPC) are theoretically investigated. The study shows that the strong interference effect decreases the photon density in particular areas of the microcavity. The d-1DPC can reduce light absorption of the monolayer MoS2 and enhance light transmission. The impact of monolayer MoS2 light absorption on the localization effect of the photon is investigated when the monolayer MoS2 and the organic light-emitting diode are located in the same microcavity. However, monolayer MoS2 does not reduce the emission intensity from the microcavity by regulating the position of monolayer MoS2 in the microcavity.
PACS: 78.67.-n – Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures / 42.25.Bs – Wave propagation, transmission and absorption / 85.60.Jb – Light-emitting devices
© EPLA, 2015
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