Volume 112, Number 4, November 2015
|Number of page(s)||6|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||26 November 2015|
Direct transition from the rhombohedral ferroelectric to the paraelectric phase in a (Ba,Sr)TiO3 thin film on a (111)MgO substrate
1 Faculty of Physics, Southern Federal University - 5, Zorge str., Rostov-on-Don, 344090, Russia
2 Southern Scientific Center RAS - 41, Chekhov str., Rostov-on-Don, 344006, Russia
3 Research Institute of Physics, Southern Federal University - 192, Stachki pr., Rostov-on-Don, 344090, Russia
4 Laboratoire de Physique de la Matière Condensée, Université de Picardie Jules Verne - 33, rue Saint-Leu, 80039 Amiens Cedex, France
Received: 19 October 2015
Accepted: 12 November 2015
A heteroepitaxial (200 nm thick) (BST) thin film was deposited on a (111)MgO substrate using rf sputtering. X-ray diffraction examinations confirmed epitaxial growth and rhombohedral symmetry of the film ( and ) at room temperature. Polarized Raman spectra of the film were studied in the temperature range from 100 to 420 K. In contrast to a BST thin film grown on (001)MgO, the observed linear temperature dependence of the squared soft mode frequency suggests the displacive character of the ferroelectric-paraelectric phase transition in a BST thin film on (111)MgO.
PACS: 78.30.-j – Infrared and Raman spectra / 77.55.fe – BaTiO3-based films
© EPLA, 2015
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