| Issue |
EPL
Volume 113, Number 1, January 2016
|
|
|---|---|---|
| Article Number | 17006 | |
| Number of page(s) | 5 | |
| Section | Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties | |
| DOI | https://doi.org/10.1209/0295-5075/113/17006 | |
| Published online | 28 January 2016 | |
Gate tunable layer selectivity of transport in bilayer graphene nanostructures
1 Department of Physics, King Fahd University of Petroleum and Minerals - 31261 Dhahran, Saudi Arabia
2 Saudi Center for Theoretical Physics - 31261 Dhahran, Saudi Arabia
3 Department of Physics, University of Antwerp - Groenenborgerlaan 171, B-2020 Antwerp, Belgium
(a) alshehab211@gmail.com
(b) ben.vanduppen@uantwerpen.be
Received: 6 November 2015
Accepted: 13 January 2016
Recently it was found that bilayer graphene may exhibit regions with and without van der Waals coupling between the two layers. We show that such structures can exhibit a strong layer selectivity when current flows through the coupled region and that this selectivity can be tuned by means of electrostatic gating. Analysing how this effect depends on the type of bilayer stacking, the potential on the gates and the smoothness of the boundary between the coupled and decoupled regions, we show that nearly perfect layer selectivity is achievable in these systems. This effect can be further used to realise a tunable layer switch.
PACS: 72.80.Vp – Electronic transport in graphene / 73.21.Ac – Multilayers / 73.22.Pr – Electronic structure of graphene
© EPLA, 2016
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