Volume 113, Number 3, February 2016
|Number of page(s)
|Interdisciplinary Physics and Related Areas of Science and Technology
|19 February 2016
Nitride quantum light sources
Department of Materials Science and Metallurgy, University of Cambridge - 27 Charles Babbage Road, Cambridge CB3 0FS, UK
Received: 3 December 2015
Accepted: 10 February 2016
Prototype nitride quantum light sources, particularly single-photon emitters, have been successfully demonstrated, despite the challenges inherent in this complex materials system. The large band offsets available between different nitride alloys have allowed device operation at easily accessible temperatures. A wide range of approaches has been explored: not only self-assembled quantum dot growth but also lithographic methods for site-controlled nanostructure formation. All these approaches face common challenges, particularly strong background signals which contaminate the single-photon stream and excessive spectral diffusion of the quantum dot emission wavelength. If these challenges can be successfully overcome, then ongoing rapid progress in the conventional III-V semiconductors provides a roadmap for future progress in the nitrides.
PACS: 81.07.Ta – Quantum dots / 81.05.Ea – III-V semiconductors / 42.50.Ex – Optical implementations of quantum information processing and transfer
© EPLA, 2016
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