Volume 114, Number 3, May 2016
|Number of page(s)||6|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||25 May 2016|
Anomalous Hall and spin Hall conductivities in three-dimensional ferromagnetic topological insulator/normal insulator heterostructures
1 National Research Centre Kurchatov Institute - Kurchatov Sqr. 1, 123182, Moscow, Russia
2 Tomsk State University - pr. Lenina 36, 634050, Tomsk, Russia
3 Donostia International Physics Center (DIPC) - Paseo de Manuel Lardizabal 4, 20018, San Sebastián/Donostia, Basque Country, Spain
4 Prokhorov General Physics Institute - Vavilov st. 38, 119991, Moscow, Russia
5 Departamento de Física de Materiales, Facultad de Ciencias Quimicas, UPV/EHU and Centro de Física de Materiales CFM- MPC, Centro Mixto CSIC-UPV/EHU Apdo. 1072, 20080 San Sebastián/Donostia, Basque Country, Spain
6 Saint Petersburg State University - 198504 Saint Petersburg, Russia
Received: 27 March 2016
Accepted: 5 May 2016
In this letter we theoretically demonstrate how an interface perturbation and size effect can be used to manipulate the transport properties of semiconductor heterostructures composed of a thin film of a three-dimensional topological insulator (TI) doped with magnetic impurities and sandwiched between topologically normal insulators. In the framework of a continual scheme, we argue that electron states of the TI film are strongly dominated by its thickness and magnetization as well as by an interface potential whose variation can lead to the modification of topological properties of the heterostructure. This opens diverse possibilities to efficiently tune intrinsic Hall conductivity in the system. We calculate a phase diagram of the heterostructure, which demonstrates a series of quantum transitions between distinct regimes of conductivity. We derive the anomalous Hall conductivity and the spin Hall conductivity dependences on the chemical potential. Applicability conditions of the used approach are also discussed.
PACS: 72.25.Dc – Spin polarized transport in semiconductors / 73.43.-f – Quantum Hall effects / 85.75.-d – Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields
© EPLA, 2016
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