Volume 114, Number 5, June 2016
|Number of page(s)||6|
|Section||Condensed Matter: Structural, Mechanical and Thermal Properties|
|Published online||07 July 2016|
Pressure-induced phase-transition and improvement of the microdielectric properties in yttrium-doped SrZrO3
1 Key Laboratory of High-Temperature and High-Pressure Study of the Earth's Interior, Institute of Geochemistry, Chinese Academy of Sciences - Guiyang, Guizhou 550002, China
2 University of Chinese Academy of Sciences - Beijing 100039, China
Received: 12 April 2016
Accepted: 17 June 2016
In this study, the effect of pressure on undoped and 5% yttrium-doped SrZrO3 (SZY0 and SZY5) were conducted from the ambient condition to with a diamond anvil cell. The comparison of the high-pressure Raman spectra of SZY0 and SZY5 indicate that SZY0 displays a rigid structure without any structural modification, whereas for SZY5 a structural transition at is revealed. Some characteristic physical parameters such as bulk conductivities, grain boundary conductivities, Warburg diffusion coefficient, transference number and bulk relaxation frequency were determined by the high-pressure impedance spectroscopy data. An obvious discontinuous inflexion point (at ) for SZY5 sample is observable which was also verified the phase-transition of the Raman spectroscopy results. A mixed conduction mechanism for both SZY0 and SZY5 are coexisting for both SZY0 and SZY5 in a wide pressure range. The pressure-induced phase-transition of SZY5 would result in an inversion of conduction mechanism that is characterized by the dominant charge carriers transformation from electron to ion. The Maxwell-Wagner relaxation arising at the interfaces of grain and grain boundary indicates that Y-doping and pressure could make the ions diffusion much easier through the boundaries and finally enhance the dielectric performance of the sample. It is suggested that pressure could be a useful tool to manipulate the microstructure and dielectric performance of polycrystal through altering the grain boundary distribution.
PACS: 61.50.Ks – Crystallographic aspects of phase transformations; pressure effects / 72.20.-i – Conductivity phenomena in semiconductors and insulators
© EPLA, 2016
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