| Issue |
EPL
Volume 115, Number 1, July 2016
|
|
|---|---|---|
| Article Number | 16001 | |
| Number of page(s) | 5 | |
| Section | Condensed Matter: Structural, Mechanical and Thermal Properties | |
| DOI | https://doi.org/10.1209/0295-5075/115/16001 | |
| Published online | 08 August 2016 | |
Metallic behavior of GaAs/BaTiO3 heterostructure
1 Department of Physics, China University of Mining and Technology - Xuzhou 221116, China
2 Laboratory of Solid State Microstructures and School of Physics, Nanjing University - Nanjing 210093, China
(a) jlwang@cumt.edu.cn (corresponding author)
Received: 23 March 2016
Accepted: 15 July 2016
The integration of III-V semiconductors on functional perovskite-oxide can lead to new material properties and new device applications by combining the rich properties of perovskite-oxides together with the superior optical and electronic properties of III-V semiconductors. The structural and electronic properties of the surface and interface of the GaAs/BaTiO3 are studied using first-principles calculations. We point out the energetically favorable GaAs/BaTiO3 interfaces according to the GaAs initial adsorption on the BaTiO3(001) substrate. Our calculations predict the existence of the metallic behavior at the GaAs/BaTiO3 interfaces.
PACS: 68.35.bg – Semiconductors / 68.35.-p – Solid surfaces and solid-solid interfaces: structure and energetics / 68.47.Gh – Oxide surfaces
© EPLA, 2016
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