Volume 116, Number 1, October 2016
|Number of page(s)||5|
|Section||Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties|
|Published online||08 November 2016|
Conduction and switching mechanism in Nb2O5 thin films based resistive switches
CSIR-National Physical Laboratory - Dr. K. S. Krishnan Marg, New Delhi 110012, India and Academy of Scientific and Innovative Research, CSIR-National Physical Laboratory Dr. K. S. Krishnan Marg, New Delhi 110012, India
Received: 18 October 2016
Accepted: 24 October 2016
We report unipolar resistive switching of Pt/Nb2O5/Al device with orthorhombic crystalline phase prepared by reactive sputtering method. It showed non-volatile reproducible unipolar switching with ON/OFF resistance ratio of 103 or higher. The range of SET and RESET voltage was 1.0–2.0 V and 0.3–0.8 V, respectively, depending on devices and their dimension. The charge carriers followed Ohmic and space-charge–limited conduction (SCLC) behaviour in low-resistance state (LRS) and high-resistance state (HRS), respectively. An impedance spectroscopy analysis as well as a drift and diffusion of oxygen ion vacancy model are presented to explain the conducting filament formation and its rupture during the SET and RESET processes.
PACS: 73.40.Rw – Metal-insulator-metal structures / 77.80.Fm – Switching phenomena
© EPLA, 2016
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