Issue |
EPL
Volume 116, Number 1, October 2016
|
|
---|---|---|
Article Number | 17003 | |
Number of page(s) | 5 | |
Section | Condensed Matter: Electronic Structure, Electrical, Magnetic and Optical Properties | |
DOI | https://doi.org/10.1209/0295-5075/116/17003 | |
Published online | 08 November 2016 |
Conduction and switching mechanism in Nb2O5 thin films based resistive switches
CSIR-National Physical Laboratory - Dr. K. S. Krishnan Marg, New Delhi 110012, India and Academy of Scientific and Innovative Research, CSIR-National Physical Laboratory Dr. K. S. Krishnan Marg, New Delhi 110012, India
(a) ashok553@nplindia.org
(b) kumarajeet@nplindia.org
Received: 18 October 2016
Accepted: 24 October 2016
We report unipolar resistive switching of Pt/Nb2O5/Al device with orthorhombic crystalline phase prepared by reactive sputtering method. It showed non-volatile reproducible unipolar switching with ON/OFF resistance ratio of 103 or higher. The range of SET and RESET voltage was 1.0–2.0 V and 0.3–0.8 V, respectively, depending on devices and their dimension. The charge carriers followed Ohmic and space-charge–limited conduction (SCLC) behaviour in low-resistance state (LRS) and high-resistance state (HRS), respectively. An impedance spectroscopy analysis as well as a drift and diffusion of oxygen ion vacancy model are presented to explain the conducting filament formation and its rupture during the SET and RESET processes.
PACS: 73.40.Rw – Metal-insulator-metal structures / 77.80.Fm – Switching phenomena
© EPLA, 2016
Current usage metrics show cumulative count of Article Views (full-text article views including HTML views, PDF and ePub downloads, according to the available data) and Abstracts Views on Vision4Press platform.
Data correspond to usage on the plateform after 2015. The current usage metrics is available 48-96 hours after online publication and is updated daily on week days.
Initial download of the metrics may take a while.